- 您现在的位置：买卖IC网 > Sheet目录486 > NTB5411NT4G (ON Semiconductor)MOSFET N-CH 60V 80A D2PAK
NTB5411N, NTP5411N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage Temper-
ature Coefficient
V (BR)DSS
V (BR)DSS /T J
V DS = 0 V, I D = 250 m A
60
54.2
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = 60 V
T J = 25 ° C
T J = 150 ° C
10
100
m A
Gate ? Body Leakage Current
I GSS
V DS = 0 V, V GS = $ 20 V
$ 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(th)
V GS = V DS , I D = 250 m A
2.0
3.2
4.0
V
Negative Threshold Temperature Coefficient
V GS(th) /T J
6.6
mV/ ° C
Drain ? to ? Source On Voltage
V DS(on)
V GS = 10 V, I D = 80 A
0.71
0.92
V
V GS = 10 V, I D = 40 A, 150 ° C
0.65
Static Drain ? to ? Source On ? Resistance
Forward Transconductance
R DS(on)
g FS
V GS = 10 V, I D = 40 A
V GS = 15 V, I D = 40 A
8.4
70
10
m W
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
C iss
C oss
V DS = 25 V, V GS = 0 V,
f = 1 MHz
3365
615
4500
pF
Transfer Capacitance
C rss
230
Total Gate Charge
Threshold Gate Charge
Q G(TOT)
Q G(TH)
V GS = 10 V, V DS = 48 V,
I D = 80 A
92
4.1
130
nC
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q GS
Q GD
19
43
SWITCHING CHARACTERISTICS, V GS = 10 V (Note 3)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
V GS = 10 V, V DD = 48 V,
I D = 80 A, R G = 9.1 W
22
122
116
113
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
I S = 37.5 A
T J = 25 ° C
T J = 150 ° C
0.91
0.8
1.1
V dc
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Stored Charge
t rr
t a
t b
Q RR
I S = 37.5 A dc , V GS = 0 V dc ,
dI S /dt = 100 A/ m s
62
43
19
0.15
ns
m C
2. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NTB5412NT4G
MOSFET N-CH 60V 60A D2PAK
NTB5426NT4G
MOSFET N-CH 60V 120A D2PAK
NTB5605T4G
MOSFET P-CH 60V 18.5A D2PAK
NTB6410ANG
MOSFET N-CH 100V 76A D2PAK
NTB6411ANG
MOSFET N-CH 100V 72A D2PAK
NTB6413ANG
MOSFET N-CH 100V 42A D2PAK
NTB85N03T4G
MOSFET N-CH 28V 85A D2PAK
NTBV5605T4G
MOSFET P-CH 60V 18.5A D2PAK
相关代理商/技术参数
NTB5412N
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 60 Amps, 60 Volts N-Channel D2PAK, TO-220
NTB5412NT4G
功能描述:MOSFET NFET D2PAK 60V 60A 14.0mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5426N
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220
NTB5426NT4G
功能描述:MOSFET 60V, 4.5mOhms N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5605P
功能描述:MOSFET -60V -18.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5605P_05
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -60 Volt, -18.5 Amp
NTB5605PG
功能描述:MOSFET -60V -18.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB5605PT4
功能描述:MOSFET -60V -18.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube